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PMV213SN,215 Datasheet
Datasheet specifications
| Datasheet's name | PMV213SN,215 |
|---|---|
| File size | 51.873 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PMV213SN,215 |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PMV213SN,215
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 280mW
- Total Gate Charge (Qg@Vgs): 7nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 330pF@20V
- Continuous Drain Current (Id): 1.9A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,500mA
- Package: SOT-23(TO-236)
- Manufacturer: Nexperia
